Datasheet

NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 7 / 14
I
D
(A)
0 -15-10-5
017aaa842
100
200
300
R
DSon
(mΩ)
0
-1.4 V -1.5 V -1.6 V -1.7 V -1.8 V
-2 V
-2.5 V
V
GS
= -4.5 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
V
GS
(V)
0 -8-6-2 -4
017aaa843
100
200
300
R
DSon
(mΩ)
0
T
j
= 150 °C
T
j
= 25 °C
I
D
= -2.8 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
V
GS
(V)
0 -2.0-1.5-0.5 -1.0
017aaa844
-6
-3
-9
-12
I
D
(A)
0
T
j
= 150 °C T
j
= 25 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
017aaa845
1.0
0.5
1.5
2.0
a
0
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values