Datasheet

NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 5 / 14
017aaa839
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.02
0.01
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa840
t
p
(s)
10
-3
10
2
10
3
10110
-2
10
-1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -20 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 µA; V
DS
= V
GS
; T
j
= 25 °C -0.47 -0.65 -0.9 V
V
DS
= -20 V; V
GS
= 0 V; T
j
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -20 V; V
GS
= 0 V; T
j
= 150 °C - - -100 µA