Datasheet

NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 4 / 14
017aaa838
-1
-10
-1
-10
-10
2
I
D
(A)
-10
-2
V
DS
(V)
-10
-1
-10
2
-10-1
Limit R
DSon
= V
DS
/I
D
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
I
DM
= single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 230 260 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 125 150 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- 25 30 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.