Datasheet

NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 2 / 14
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
S
D
G
017aaa257
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMV65XP %M9
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= -4.5 V; T
sp
= 25 °C - -4.3 A
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -2.8 A
I
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -1.8 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -16 A
[2] - 480 mWT
amb
= 25 °C
[1] - 833 mW
P
tot
total power dissipation
T
sp
= 25 °C - 4165 mW