SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applications • • • • Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment 4.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S TO-236AB (SOT23) 017aaa257 6. Ordering information Table 3. Ordering information Type number Package PMV65XP Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Tj Conditions Min Max Unit junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1.6 A Source-drain diode IS source current [1] [2] Tsp = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa838 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms -1 tp = 10 ms DC; Tsp = 25 °C -10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa839 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 0 0.01 1 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa840 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0 0.02 0.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C - 82 105 mΩ VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 67 92 mΩ VGS = -1.8 V; ID = -1 A; Tj = 25 °C - 87 135 mΩ VDS = -10 V; ID = -2.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa842 300 -1.4 V -1.5 V -1.6 V -1.7 V -1.8 V RDSon (mΩ) 017aaa843 300 RDSon (mΩ) 200 200 -2 V 100 Tj = 150 °C 100 -2.5 V VGS = -4.5 V 0 0 -5 -10 Tj = 25 °C ID (A) 0 -15 Tj = 25 °C Fig. 8. 0 -2 -4 -6 VGS (V) -8 ID = -2.8 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa846 -2.0 017aaa847 103 Ciss VGS(th) (V) C (pF) -1.5 102 -1.0 max Coss Crss typ -0.5 min 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa849 -12 IS (A) -9 -6 Tj = 150 °C Tj = 25 °C -3 0 0 -0.5 -1.0 VSD (V) -1.5 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV65XP Product data sheet All information provided in this document is subject to legal disclaimers. 12 February 2013 © NXP B.V.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.38 1.9 Dimensions in mm 0.15 0.09 04-11-04 Fig. 18. Package outline TO-236AB (SOT23) 13. Soldering 3.3 2.9 1.9 solder lands 3 2 1.7 solder resist solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for TO-236AB (SOT23) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV65XP v.2 20130212 Product data sheet - PMV65XP v.1 Modifications: • PMV65XP v.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
PMV65XP NXP Semiconductors 20 V, single P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ....................................
