Datasheet

PMEG6010ER_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 9 March 2010 6 of 14
NXP Semiconductors
PMEG6010ER
1 A low V
F
MEGA Schottky barrier rectifier
(1) T
j
= 150 °C
(2) T
j
= 125 °C
(3) T
j
=85°C
(4) T
j
=25°C
(5) T
j
= −40 °C
(1) T
j
= 125 °C
(2) T
j
=85°C
(3) T
j
=25°C
(4) T
j
= −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb
=25°C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
006aab890
10
−2
10
−3
1
10
−1
10
I
F
(A)
10
−4
V
F
(V)
0.0 0.80.60.2 0.4
(1)
(2)
(3) (4) (5)
006aab891
V
R
(V)
0604020
10
−2
10
−3
10
−4
10
−5
10
−6
10
−7
10
−8
I
R
(A)
10
−9
(4)
(1)
(2)
(3)
006aab892
V
R
(V)
0604020
100
150
50
200
250
C
d
(pF)
0