Datasheet

PMEG6010ER_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 9 March 2010 5 of 14
NXP Semiconductors
PMEG6010ER
1 A low V
F
MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab364
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 A - 320 370 mV
I
F
= 0.7 A - 430 490 mV
I
F
= 1 A - 460 530 mV
I
R
reverse current V
R
=5V - 1.2 - μA
V
R
=10V - 1.7 - μA
V
R
=60V - 30 60 μA
C
d
diode capacitance f = 1 MHz
V
R
= 1 V - 120 - pF
V
R
=10V - 40 - pF