Datasheet

PMEG4050EP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 14 September 2009 5 of 13
NXP Semiconductors
PMEG4050EP
5 A low V
F
MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab690
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 A - 270 310 mV
I
F
= 1 A - 340 390 mV
I
F
= 5 A - 430 490 mV
I
R
reverse current V
R
=10V - 10 - µA
V
R
= 40 V - 60 300 µA
C
d
diode capacitance f=1MHz
V
R
= 1 V - 600 - pF
V
R
= 10 V - 220 - pF