Datasheet

2004 Jun 14 3
NXP Semiconductors Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMEGXX10BEA − plastic surface mounted package; 2 leads SOD323
PMEGXX10BEV plastic surface mounted package; 6 leads SOT666
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV − 20 V
PMEG3010BEA/PMEG3010BEV − 30 V
PMEG4010BEA/PMEG4010BEV − 40 V
I
F
continuous forward current T
s
≤ 55 °C; note 1 − 1 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A
I
FSM
non-repetitive peak forward current t
p
= 8 ms; square wave;
note
2
− 10 A
T
j
junction temperature note 3 − 150 °C
T
amb
operating ambient temperature note 3 −65 +150 °C
T
stg
storage temperature −65 +150 °C