Datasheet

2004 Jun 14 2
NXP Semiconductors Product data sheet
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
• Forward current: 1 A
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
APPLICATIONS
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
• Low voltage rectification
• Blocking diodes
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
PMEG2010BEA V1
PMEG3010BEA V2
PMEG4010BEA V3
PMEG2010BEV G6
PMEG3010BEV G5
PMEG4010BEV G4
SYMBOL PARAMETER MAX. UNIT
I
F
forward current 1 A
V
R
reverse voltage 20; 30; 40 V
PIN DESCRIPTION
PMEGXX10BEA (see Fig.1)
1 cathode
2 anode
PMEGXX10BEV (see Fig.2)
1, 2, 5, 6 cathode
3, 4 anode
sym00
1
12
2
1
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
123
456
sym03
8
1
,2
5
,6
3,
4
Fig.2 Simplified outline (SOT666) and symbol.