Datasheet

PMEG3010EH_EJ_ET_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 20 March 2007 3 of 11
NXP Semiconductors
PMEG3010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current T
sp
≤ 55 °C-1A
I
FRM
repetitive peak forward
current
t
p
≤ 1 ms; δ≤0.25
PMEG3010EH - 7 A
PMEG3010EJ - 7 A
PMEG3010ET - 5 A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=8ms
-9A
P
tot
total power dissipation T
amb
≤ 25 °C
PMEG3010EH
[1]
- 375 mW
[2]
- 830 mW
PMEG3010EJ
[1]
- 350 mW
[2]
- 830 mW
PMEG3010ET
[1]
- 280 mW
[2]
- 420 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C