Datasheet

ManualsBrandsNXP ManualsDiodesSchottky Diode, 2A, 20V, SOD-323F

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an

integrated guard ring for stress protection, encapsulated in small and flat lead Surface

Mounted Device (SMD) plastic packages.

1.2 Features

 Forward current: 2 A

 Reverse voltage: 20 V

 Very low forward voltage

 Small and flat lead SMD plastic package

1.3 Applications

 Low voltage rectification

 High efficiency DC-to-DC conversion

 Switch mode power supply

 Inverse polarity protection

 Low power consumption applications

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PMEG2020EH; PMEG2020EJ

20 V, 2 A very low V

MEGA Schottky barrier rectifiers

Rev. 04 — 15 January 2010 Product data sheet

Table 1. Product overview

Type number Package Configuration

NXP JEITA

PMEG2020EH SOD123F - single diode

PMEG2020EJ SOD323F SC-90 single diode

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

forward current T

≤ 55 °C --2A

reverse voltage - - 20 V

forward voltage I

=2A

[1]

- 450 525 mV

Summary of content (10 pages)

PAGE 1
PMEG2020EH; PMEG2020EJ 20 V, 2 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small and flat lead Surface Mounted Device (SMD) plastic packages. Table 1.
PAGE 2
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 2. Pinning information Table 3. Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 1 2 2 sym001 001aab540 [1] The marking bar indicates the cathode. 3. Ordering information Table 4.
PAGE 3
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 20 V - 2 A VR reverse voltage IF forward current IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.
PAGE 4
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol VF IR Cd [1] Parameter Conditions Min Typ Max Unit IF = 0.01 A - 200 220 mV IF = 0.
PAGE 5
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 006aaa011 104 IR (mA) IF (mA) 006aaa012 102 10 (1) 1 (2) 103 10−1 102 (3) 10−2 (1) 10 (2) (3) (4) 10−3 10−4 1 (4) 10−5 10−1 10−6 0 0.1 0.2 0.3 0.4 0.5 0 5 VF (V) 15 20 VR (V) (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C (4) Tamb = −40 °C (4) Tamb = −40 °C Fig 1.
PAGE 6
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 8. Package outline 1.7 1.5 1.2 1.0 1.35 1.15 1 0.80 0.65 0.5 0.3 1 0.55 0.35 3.6 3.4 2.7 2.3 2.7 2.5 1.8 1.6 2 2 Dimensions in mm Fig 4. 0.25 0.10 0.40 0.25 0.25 0.10 0.70 0.55 04-11-29 Package outline SOD123F Dimensions in mm Fig 5. 04-09-13 Package outline SOD323F (SC-90) 9. Packing information Table 9.
PAGE 7
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 10. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 6. Reflow soldering footprint SOD123F 3.05 2.80 2.10 1.60 solder lands solder resist 1.65 0.95 0.50 0.60 occupied area solder paste 0.50 (2×) msa433 Reflow soldering is the only recommended soldering method.
PAGE 8
PMEG2020EH; PMEG2020EJ NXP Semiconductors 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG2020EH_EJ_4 20100115 Product data sheet - PMEG2020EH_EJ_3 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 9
NXP Semiconductors PMEG2020EH; PMEG2020EJ 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 10
NXP Semiconductors PMEG2020EH; PMEG2020EJ 20 V, 2 A very low VF MEGA Schottky barrier rectifiers 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . .