Datasheet

2004 Feb 06 3
NXP Semiconductors Product data sheet
Low V
F
(MEGA) Schottky barrier diode
PMEG2010EA
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
continuous forward voltage see Fig.2; note 1
I
F
= 10 mA 240 270 mV
I
F
= 100 mA 300 350 mV
I
F
= 1 000 mA 480 550 mV
I
R
continuous reverse current see Fig.3; note 1
V
R
= 5 V 5 10 μA
V
R
= 8 V 7 20 μA
V
R
= 15 V 10 50 μA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.4 19 25 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 220 K/W
note 2 180 K/W