Datasheet

2004 Feb 06 2
NXP Semiconductors Product data sheet
Low V
F
(MEGA) Schottky barrier diode
PMEG2010EA
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Ultra high-speed switching
• Very low forward voltage
• Very small plastic SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
col
umns
12
MGU328
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
Marking code: E1.
The marking bar indicates the cathode.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PMEG2010EA − plastic surface mounted package; 2 leads SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 20 V
I
F
continuous forward current − 1 A
I
FSM
non-repetitive peak forward current t
p
= 8.3 ms half sinewave;
JEDEC method
− 5 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
T
amb
operating ambient temperature −65 +125 °C