Datasheet

2003 Dec 03 4
NXP Semiconductors Product data sheet
20 V, 1 A ultra low V
F
MEGA Schottky
barrier rectifier in SOD523 package
PMEG2010AEB
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
= 0.1 mA 30 60 mV
I
F
= 1 mA 80 110 mV
I
F
= 10 mA 140 190 mV
I
F
= 100 mA 230 290 mV
I
F
= 1 000 mA 510 620 mV
I
R
continuous reverse current V
R
= 10 V; note 1 0.17 0.6 mA
V
R
= 20 V; note 1 0.32 1.5 mA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz 19 25 pF