DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package Product data sheet 2003 Dec 03
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package FEATURES PMEG2010AEB QUICK REFERENCE DATA • Forward current: 1.0 A SYMBOL • Reverse voltage: 20 V IF forward current 1 A VR reverse voltage 20 V • Ultra low forward voltage PARAMETER MAX. UNIT • Ultra small SMD package.
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 20 V Ts ≤ 55 °C − 1.0 A repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5 − 3.
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IR continuous reverse current Cd diode capacitance CONDITIONS MAX. UNIT IF = 0.1 mA 30 60 mV IF = 1 mA 80 110 mV IF = 10 mA 140 190 mV IF = 100 mA 230 290 mV IF = 1 000 mA 510 620 mV VR = 10 V; note 1 0.17 0.6 mA VR = 20 V; note 1 0.32 1.
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB GRAPHICAL DATA com001 103 MLE228 5 10halfpage handbook, I R (μA) 104 IF (mA) (1) 102 103 (2) (1) (2) (3) 102 10 10 1 (3) 1 10−1 10−1 0 0.2 0.4 0.6 0 0.8 8 VF (V) (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. (1) Tamb = 85 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values.
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD523V A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode.
NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PMEG2010AEB DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
