Datasheet

2004 Jan 12 4
NXP Semiconductors Product data sheet
NPN switching transistor PMBT3904
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
f
T
transition frequency I
C
= 10 mA; V
CE
= 20 V;
f
= 100 MHz
300 − MHz
F noise figure I
C
= 100 µA; V
CE
= 5 V; R
S
= 1 kΩ;
f
= 10 Hz to 15.7 kHz
− 5 dB
Switching times (between 10% and 90% levels); see Fig.3
t
d
delay time I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
= −1 mA
− 35 ns
t
r
rise time − 35 ns
t
s
storage time − 200 ns
t
f
fall time − 50 ns
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
handbook, halfpage
MGU821
h
FE
100
0
200
400
300
500
I
C
(mA)
10
−1
11010
2
10
3
(1)
(2)
(3)
Fig.2 DC current gain; typical values.
V
CE
= 1 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
Fig.3 Collector current as a function of
collector-emitter voltage.
(1) I
B
= 5.5 mA.
(2) I
B
= 5 mA.
(3) I
B
= 4.5 mA.
(4) I
B
= 3.5 mA.
(5) I
B
= 3 mA.
(6) I
B
= 2.5 mA.
(7) I
B
= 2 mA.
(8) I
B
= 1.5 mA.
(9) I
B
= 1 mA.
(10) I
B
= 0.5 mA.
handbook, halfpage
I
C
(mA)
062810
V
CE
(V)
4
0
250
150
200
50
100
MGU822
(1) (2) (3) (4) (5) (6) (7)
(8)
(9)
(10)
T
amb
= 25 °C.