Datasheet

2004 Jan 12 3
NXP Semiconductors Product data sheet
NPN switching transistor PMBT3904
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 60 V
V
CEO
collector-emitter voltage open base − 40 V
V
EBO
emitter-base voltage open collector − 6 V
I
C
collector current (DC) − 200 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − 50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 6 V − 50 nA
h
FE
DC current gain V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA 60 −
I
C
= 1 mA 80 −
I
C
= 10 mA 100 300
I
C
= 50 mA 60 −
I
C
= 100 mA 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 1 mA − 200 mV
I
C
= 50 mA; I
B
= 5 mA − 300 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA 650 850 mV
I
C
= 50 mA; I
B
= 5 mA − 950 mV
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz − 4 pF
C
e
emitter capacitance I
C
= I
c
= 0; V
BE
= 500 mV;
f
= 1 MHz
− 8 pF