Datasheet

Philips Semiconductors
PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 8 of 13
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°C and 150 °C; V
GS
=0V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
03aa08
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1 1.2
T
j
= 25
o
C
150
o
C
V
GS
= 0 V
I
S
(A)
V
SD
(V)