Datasheet

Philips Semiconductors
PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 7 of 13
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=25°C; V
DS
=5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
=25°C and 150 °C; V
DS
≥ I
D
× R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
typ
min
V
GS(th)
(V)
T
j
(
o
C)
03aa37
0 0.5 1 1.5 2 2.5 3
typmin
I
D
(A)
V
GS
(V)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
03aa07
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T
j
= 25
o
C
150
o
C
V
DS
> I
D
X R
DSon
g
fs
(S)
I
D
(A)
03aa09
1
10
10
2
10
-1
11010
2
C
iss
C
oss
C
rss
C
iss
, C
oss
C
rss
(pF)
V
DS
(V)