Datasheet

Philips Semiconductors
PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 4 of 13
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 4
150 K/W
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint
350 K/W
Mounted on metal clad substrate.
Fig 4. Transient thermal impedance from junction to solder point as a function of
pulse duration.
03aa01
10
-1
1
10
10
2
10
3
t
p
(s)
Z
th(j-sp)
K/W
single pulse
0.2
0.1
0.05
0.02
δ = 0.5
t
p
t
p
T
P
t
T
δ =
10
-4
10
-5
10
-3
10
-2
10
-1
110