Datasheet

Philips Semiconductors
PMBF170
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 23 June 2000 3 of 13
9397 750 07208
© Philips Electronics N.V. 2000. All rights reserved.
V
GS
≥ 4.5 V
Fig 1. Normalized total power dissipation as a
function of solder point temperature.
Fig 2. Normalized continuous drain current as a
function of solder point temperature.
T
sp
=25°C; I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
P
der
T
sp
(
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
I
der
(%)
T
sp
(
o
C)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%×=
I
der
I
D
I
D25C
°
()
-------------------
100%×=
03aa03
10
-2
10
-1
1
10
11010
2
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µs
100 µs
T
sp
= 25
o
C
t
p
t
p
T
P
t
T
δ =