Datasheet

2004 Apr 15 8
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
001aaa270
1
10
10
−1
T
j
(°C)
−100 150100050−50
I
R
I
R(25˚C)
(1)
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
I
R
is less than 10 nA at 150 °C for:
PESD12V52UT; V
RWM
= 12 V.
PESD15VS2UT; V
RWM
= 15 V.
PESD24VS2UT; V
RWM
= 24 V.
(1) PESD3V3S2UT; V
RWM
= 3.3 V.
PESD5V2S2UT; V
RWM
= 5 V.