Datasheet

2004 Apr 15 5
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
RWM
reverse stand-off voltage
PESD3V3S2UT − − 3.3 V
PESD5V2S2UT − − 5.2 V
PESD12VS2UT − − 12 V
PESD15VS2UT − − 15 V
PESD24VS2UT − − 24 V
I
RM
reverse leakage current
PESD3V3S2UT V
RWM
= 3.3 V − 0.7 2 µA
PESD5V2S2UT V
RWM
= 5.2 V − 0.15 1 µA
PESD12VS2UT V
RWM
= 12 V − <0.02 1 µA
PESD15VS2UT V
RWM
= 15 V − <0.02 1 µA
PESD24VS2UT V
RWM
= 24 V − <0.02 1 µA
V
BR
breakdown voltage I
Z
= 5 mA
PESD3V3S2UT 5.2 5.6 6.0 V
PESD5V2S2UT 6.4 6.8 7.2 V
PESD12VS2UT 14.7 15.0 15.3 V
PESD15VS2UT 17.6 18.0 18.4 V
PESD24VS2UT 26.5 27.0 27.5 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V
PESD3V3S2UT − 207 300 pF
PESD5V2S2UT − 152 200 pF
PESD12VS2UT − 38 75 pF
PESD15VS2UT − 32 70 pF
PESD24VS2UT − 23 50 pF
V
(CL)R
clamping voltage notes 1 and 2
PESD3V3S2UT I
pp
= 1 A − − 7 V
I
pp
= 18 A − − 20 V
PESD5V2S2UT I
pp
= 1 A − − 9 V
I
pp
= 15 A − − 20 V
PESD12VS2UT I
pp
= 1 A − − 19 V
I
pp
= 5 A − − 35 V
PESD15VS2UT I
pp
= 1 A − − 23 V
I
pp
= 5 A − − 40 V
PESD24VS2UT I
pp
= 1 A − − 36 V
I
pp
= 3 A − − 70 V