Datasheet

2004 Apr 15 2
NXP Semiconductors Product data sheet
Double ESD protection diodes in SOT23
package
PESDxS2UT series
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: P
pp
= 330 W at t
p
= 8/20 µs
• Low clamping voltage: V
(CL)R
= 20 V at I
pp
= 18 A
• Ultra-low reverse leakage current: I
RM
< 700 nA
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
pp
= 18 A at t
p
= 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PESD3V3S2UT *U9
PESD5V2S2UT *U1
PESD12VS2UT *U2
PESD15VS2UT *U3
PESD24VS2UT *U4
SYMBOL PARAMETER VALUE UNIT
V
RWM
reverse stand-off
voltage
3.3, 5.2, 12, 15
and 24
V
C
d
diode capacitance
V
R
= 0 V;
f
= 1 MHz
207, 152, 38, 32
and 23
pF
number of
protected lines
2
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 common anode
sym022
2
1
3
1
2
001aaa49
0
3
Fig.1 Simplified outline (SOT23) and symbol.