DISCRETE SEMICONDUCTORS DATA SHEET PESDxS2UT series Double ESD protection diodes in SOT23 package Product data sheet Supersedes data of 2003 Aug 20 2004 Apr 15
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package FEATURES PESDxS2UT series QUICK REFERENCE DATA • Uni-directional ESD protection of up to two lines SYMBOL • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs VRWM reverse stand-off voltage 3.3, 5.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UT − DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ESD maximum ratings SYMBOL ESD PARAMETER CONDITIONS electrostatic discharge capability VALUE UNIT PESD3V3S2UT 30 kV PESD5V2S2UT 30 kV PESD12VS2UT 30 kV PESD15VS2UT 30 kV PESD24VS2UT 23 kV 10 kV IEC 61000-4-2 (contact discharge); notes 1 and 2 HBM MIL-Std 883 PESDxS2UT series Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VRWM IRM VBR Cd V(CL)R PARAMETER MIN. TYP. MAX. UNIT reverse stand-off voltage PESD3V3S2UT − − 3.3 V PESD5V2S2UT − − 5.2 V PESD12VS2UT − − 12 V PESD15VS2UT − − 15 V PESD24VS2UT − − 24 V reverse leakage current PESD3V3S2UT VRWM = 3.3 V − 0.7 2 µA PESD5V2S2UT VRWM = 5.2 V − 0.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package SYMBOL Rdiff PARAMETER PESDxS2UT series CONDITIONS MIN. TYP. MAX. UNIT differential resistance PESD3V3S2UT IR = 1 mA − − 400 Ω PESD5V2S2UT IR = 1 mA − − 80 Ω PESD12VS2UT IR = 1 mA − − 200 Ω PESD15VS2UT IR = 1 mA − − 225 Ω PESD24VS2UT IR = 0.5 mA − − 300 Ω Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa148 240 001aaa149 50 Cd (pF) Cd (pF) 200 40 160 120 (1) 30 (2) 20 (1) (2) 80 (3) 10 40 0 1 2 3 4 0 5 0 VR (V) 5 10 15 20 25 VR (V) (1) PESD12VS2UT; VRWM = 12 V. (2) PESD15VS2UT; VRWM = 15 V. (1) PESD3V3S2UT; VRWM = 3.3 V. (2) PESD5V2S2UT; VRWM = 5 V. (3) PESD24VS2UT; VRWM = 24 V. Tamb = 25 °C; f = 1 MHz. Tamb = 25 °C; f = 1 MHz. Fig.6 Fig.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package 001aaa270 10 IR IR(25˚C) (1) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S2UT; VRWM = 3.3 V. PESD5V2S2UT; VRWM = 5 V. IR is less than 10 nA at 150 °C for: PESD12V52UT; VRWM = 12 V. PESD15VS2UT; VRWM = 15 V. PESD24VS2UT; VRWM = 24 V. Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package ESD TESTER RZ 450 Ω PESDxS2UT series RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series APPLICATION INFORMATION The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs waveform.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
