Datasheet

PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 6 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
T
amb
= 25 °C
Fig 3. Peak pulse power dissipation as a function of
exponential time duration t
p
; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
T
amb
= 25 °C; f = 1 MHz
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
001aaa202
t
p
(µs)
110
4
10
3
10 10
2
10
2
10
3
P
pp
(W)
10
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
V
R
(V)
054231
001aaa203
30
26
34
38
C
d
(pF)
22
001aaa204
T
j
(°C)
75 150125100
10
1
10
2
10
−1
I
RM(T
j
)
I
RM(T
j
=85°C)