Datasheet

PESD5V0S1BA_BB_BL_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 20 August 2009 5 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2] Measures from pin 1 to pin 2.
Table 9. Characteristics
T
amb
= 25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse stand-off voltage - - 5 V
I
RM
reverse leakage current V
RWM
= 5 V;
see
Figure 6
- 5 100 nA
V
(CL)R
clamping voltage I
PP
= 1 A
[1][2]
--10V
I
PP
= 12 A
[1][2]
--14V
V
(BR)
breakdown voltage I
R
= 1 mA 5.5 - 9.5 V
r
dif
differential resistance I
R
= 1 mA - - 50 Ω
C
d
diode capacitance V
R
= 0 V; f = 1 MHz;
see
Figure 5
- 3545pF