Datasheet

PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 7 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
T
amb
=25°C
(1) PESD3V3L2BT and PESD5V0L2BT
(2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT
Fig 3. Peak pulse power as a function of exponential
pulse duration t
p
; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
T
amb
=25°C; f = 1 MHz
(1) PESD3V3L2BT
(2) PESD5V0L2BT
T
amb
=25°C; f = 1 MHz
(1) PESD12VL2BT
(2) PESD15VL2BT
(3) PESD24VL2BT
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
006aaa531
10
3
10
2
10
4
P
PP
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
(1)
(2)
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
V
R
(V)
054231
006aaa067
70
90
100
110
C
d
(pF)
50
60
80
(1)
(2)
V
R
(V)
0252010 155
006aaa068
8
12
4
16
20
C
d
(pF)
0
(1)
(2)
(3)