Datasheet

PESDXL2BT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 25 August 2009 5 of 14
NXP Semiconductors
PESDxL2BT series
Low capacitance double bidirectional ESD protection diodes in SOT23
6. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff voltage
PESD3V3L2BT - - 3.3 V
PESD5V0L2BT - - 5.0 V
PESD12VL2BT - - 12 V
PESD15VL2BT - - 15 V
PESD24VL2BT - - 24 V
I
RM
reverse leakage current
PESD3V3L2BT V
RWM
= 3.3 V - 0.09 2 µA
PESD5V0L2BT V
RWM
= 5.0 V - 0.01 1 µA
PESD12VL2BT V
RWM
=12V - <1 50 nA
PESD15VL2BT V
RWM
=15V - <1 50 nA
PESD24VL2BT V
RWM
=24V - <1 50 nA
V
BR
breakdown voltage I
R
=5mA
PESD3V3L2BT 5.8 6.4 6.9 V
PESD5V0L2BT 7.0 7.6 8.2 V
PESD12VL2BT 14.2 15.8 16.7 V
PESD15VL2BT 17.1 18.8 20.3 V
PESD24VL2BT 25.4 27.8 30.3 V
C
d
diode capacitance V
R
=0V;
f=1MHz
PESD3V3L2BT - 101 - pF
PESD5V0L2BT - 75 - pF
PESD12VL2BT - 19 - pF
PESD15VL2BT - 16 - pF
PESD24VL2BT - 11 - pF
V
CL
clamping voltage
[1][2]
PESD3V3L2BT I
PP
=1A - - 8 V
I
PP
=15A - - 26 V
PESD5V0L2BT I
PP
=1A - - 10 V
I
PP
=13A - - 28 V
PESD12VL2BT I
PP
=1A - - 20 V
I
PP
=5A - - 37 V
PESD15VL2BT I
PP
=1A - - 25 V
I
PP
=5A - - 44 V
PESD24VL2BT I
PP
=1A - - 40 V
I
PP
=3A - - 70 V