Datasheet

ManualsBrandsNXP ManualsDiodesESD Protection Diode, 5 V 350 W SOT-23

1. Product proﬁle

1.1 General description

Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a

SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two

signal lines from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

PESDxL2BT series

Low capacitance double bidirectional ESD protection diodes

in SOT23

Rev. 02 — 25 August 2009 Product data sheet

n ESD protection of two lines n Ultra low leakage current: I

<90nA

n Max. peak pulse power: P

= 350 W n ESD protection up to 23 kV

n Low clamping voltage: V

=26V n IEC 61000-4-2, level 4 (ESD)

n Small SMD plastic package n IEC 61000-4-5 (surge); I

=15A

n Computers and peripherals n Communication systems

n Audio and video equipment n Portable electronics

n Cellular handsets and accessories n Subscriber Identity Module (SIM) card

protection

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

RWM

reverse standoff voltage

PESD3V3L2BT - - 3.3 V

PESD5V0L2BT - - 5.0 V

PESD12VL2BT - - 12 V

PESD15VL2BT - - 15 V

PESD24VL2BT - - 24 V

diode capacitance V

=0V;

f=1MHz

PESD3V3L2BT - 101 - pF

PESD5V0L2BT - 75 - pF

PESD12VL2BT - 19 - pF

PESD15VL2BT - 16 - pF

PESD24VL2BT - 11 - pF

Summary of content (14 pages)

PAGE 1
PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of two lines Max.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 double cathode Simplified outline Symbol 3 1 3 1 2 2 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM VBR Conditions Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V reverse leakage current PESD3V3L2BT VRWM = 3.3 V - 0.09 2 µA PESD5V0L2BT VRWM = 5.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit rdif differential resistance IR = 1 mA PESD3V3L2BT - - 400 Ω PESD5V0L2BT - - 80 Ω PESD12VL2BT - - 200 Ω PESD15VL2BT - - 225 Ω PESD24VL2BT - - 300 Ω [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
PAGE 7
PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa531 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 (1) (2) 102 0.4 10 1 102 10 103 0 104 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C (1) PESD3V3L2BT and PESD5V0L2BT (2) PESD12VL2BT, PESD15VL2BT, PESD24VL2BT Fig 3. Peak pulse power as a function of exponential pulse duration tp; typical values Fig 4.
PAGE 8
PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 006aaa069 10 IPP (1) IRM IRM(25°C) −VCL −VBR −VRWM 1 IR IRM −IRM −IR VRWM VBR VCL − 10−1 −100 −50 0 50 100 + −IPP 150 Tj (°C) 006aaa676 (1) PESD3V3L2BT, PESD5V0L2BT PESD12VL2BT, PESD15VL2BT and PESD24VL2BT: IRM < 20 nA; Tj = 150 °C Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values Fig 8.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 ESD TESTER RZ 450 Ω 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.
PAGE 10
PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 7. Application information The PESDxL2BT series is designed for the protection of two bidirectional signal lines from the damage caused by ESD and surge pulses. The PESDxL2BT series may be used on lines where the signal polarities are above and below ground. The PESDxL2BT series provides a surge capability of up to 350 W per line for an 8/20 µs waveform.
PAGE 11
PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 8. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXL2BT_SER_2 20090825 Product data sheet - PESDXL2BT_SER_1 Modifications: PESDXL2BT_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 14
PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . .