Datasheet

PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 4 of 13
NXP Semiconductors
PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
−t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
Table 9. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff voltage - - 5.0 V
I
RM
reverse leakage current V
RWM
= 5.0 V - 10 100 nA
V
BR
breakdown voltage I
R
= 5 mA 6.4 6.8 7.2 V
C
d
diode capacitance f = 1 MHz;
V
R
=0V
- 2530pF
V
CL
clamping voltage
[1][2]
I
PP
=1A --9V
I
PP
= 3.5 A - - 12 V
r
dif
differential resistance I
R
=5mA --30Ω
V
F
forward voltage I
F
= 200 mA - - 1.2 V