Datasheet

PESDXS1UB_SERIES_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 August 2009 5 of 15
NXP Semiconductors
PESDxS1UB series
ESD protection diodes in SOD523 package
6. Characteristics
Table 8. Characteristics
T
amb
= 25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse standoff voltage
PESD3V3S1UB - - 3.3 V
PESD5V0S1UB - - 5 V
PESD12VS1UB - - 12 V
PESD15VS1UB - - 15 V
PESD24VS1UB - - 24 V
I
RM
reverse leakage current see Figure 7
PESD3V3S1UB V
RWM
= 3.3 V - 0.7 2 µA
PESD5V0S1UB V
RWM
= 5 V - 0.1 1 µA
PESD12VS1UB V
RWM
= 12 V - < 1 50 nA
PESD15VS1UB V
RWM
= 15 V - < 1 50 nA
PESD24VS1UB V
RWM
= 24 V - < 1 50 nA
V
BR
breakdown voltage I
R
= 5 mA
PESD3V3S1UB 5.2 5.6 6.0 V
PESD5V0S1UB 6.4 6.8 7.2 V
PESD12VS1UB 14.7 15.0 15.3 V
PESD15VS1UB 17.6 18.0 18.4 V
PESD24VS1UB 26.5 27.0 27.5 V
C
d
diode capacitance V
R
= 0 V; f = 1 MHz;
see
Figure 5 and 6
PESD3V3S1UB - 207 300 pF
PESD5V0S1UB - 152 200 pF
PESD12VS1UB - 38 75 pF
PESD15VS1UB - 32 70 pF
PESD24VS1UB - 23 50 pF
V
(CL)R
clamping voltage
[1]
PESD3V3S1UB I
PP
= 1 A - - 7 V
I
PP
= 18 A - - 20 V
PESD5V0S1UB I
PP
= 1 A - - 9 V
I
PP
= 15 A - - 20 V
PESD12VS1UB I
PP
= 1 A - - 19 V
I
PP
= 5A - - 35 V
PESD15VS1UB I
PP
= 1 A - - 23 V
I
PP
= 5 A - - 40 V
PESD24VS1UB I
PP
= 1 A - - 36 V
I
PP
= 3 A - - 70 V