Datasheet

ManualsBrandsNXP ManualsDiodesESD Protection Diode, 3.3 V 330 W SOD-523

1. Product proﬁle

1.1 General description

Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one

transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and

other transients.

1.2 Features

n Unidirectional ESD protection of one line

n Max. peak pulse power: P

= 330 W at t

= 8/20 µs

n Low clamping voltage: V

= 20 V at I

= 18 A

n Ultra low leakage current: I

< 700 nA

n ESD protection > 23 kV

n IEC 61000-4-2, level 4 (ESD)

n IEC 61000-4-5 (surge); I

= 18 A at t

= 8/20 µs

1.3 Applications

n Computers and peripherals

n Communication systems

n Audio and video equipment

n Data lines

n CAN bus protection

1.4 Quick reference data

PESDxS1UB series

ESD protection diodes in SOD523 package

Rev. 02 — 24 August 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Value Unit

RWM

reverse standoff voltage

PESD3V3S1UB 3.3 V

PESD5V0S1UB 5 V

PESD12VS1UB 12 V

PESD15VS1UB 15 V

PESD24VS1UB 24 V

Summary of content (15 pages)

PAGE 1
PESDxS1UB series ESD protection diodes in SOD523 package Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and other transients. 1.2 Features n n n n n n n Unidirectional ESD protection of one line Max.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package Table 1. Quick reference data …continued Symbol Parameter Conditions Cd diode capacitance VR = 0 V; f = 1 MHz Value Unit PESD3V3S1UB 207 pF PESD5V0S1UB 152 pF PESD12VS1UB 38 pF PESD15VS1UB 32 pF PESD24VS1UB 23 pF number of protected lines 1 2. Pinning information Table 2.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 0 10 20 30 t (µs) Fig 1. 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESDXS1UB_SERIES_2 Product data sheet t 30 ns 40 © NXP B.V. 2009. All rights reserved. Rev.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse standoff voltage Conditions Min Typ Max PESD3V3S1UB - - 3.3 V PESD5V0S1UB - - 5 V PESD12VS1UB - - 12 V PESD15VS1UB - - 15 V - - 24 V PESD24VS1UB IRM VBR reverse leakage current see Figure 7 PESD3V3S1UB VRWM = 3.3 V - 0.7 2 µA PESD5V0S1UB VRWM = 5 V - 0.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Rdiff differential resistance [1] Conditions Min Typ Max Unit PESD3V3S1UB IR = 1 mA - - 400 Ω PESD5V0S1UB IR = 1 mA - - 80 Ω PESD12VS1UB IR = 1 mA - - 200 Ω PESD15VS1UB IR = 1 mA - - 225 Ω PESD24VS1UB IR = 0.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa147 104 001aaa193 1.2 PPP Ppp (W) PPP(25°C) 103 0.8 (1) 102 0.4 (2) 10 1 102 10 103 0 104 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C tp = 8/20 µs exponentially decay waveform, see Figure 1 (1) PESD3V3S1UB and PESD5V0S1UB (2) PESD12VS1UB, PESD15VS1UB; PESD24VS1UB Fig 3. Peak pulse power dissipation as a function of pulse time; typical values Fig 4.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa270 10 IR IR(25˚C) (1) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3S1UB; VRWM = 3.3 V PESD5V0S1UB; VRWM = 5 V IR is less than 10 nA at 150 °C for: PESD12VS1UB; VRWM = 12 V PESD15VS1UB; VRWM = 15 V PESD24VS1UB; VRWM = 24 V Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package ESD TESTER RZ 450 Ω RG 223/U 50 Ω coax 4 GHz DIGITAL OSCILLOSCOPE 10× ATTENUATOR 50 Ω CZ 1 D.U.T.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 7. Application information The PESDxS1UB series is designed for unidirectional protection of one single data line from the damage caused by ESD (ElectroStatic Discharge) and Surge Pulses. The PESDxS1UB series may be used on lines where the signal polarity is above or below ground. The PESDxS1UB series provides a surge capability of up to 330 Watts per line for a 8/20 µs waveform.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 8. Package outline Plastic surface-mounted package; 2 leads SOD523 A c v M A HE A D 1 E 0 0.5 1 mm scale 2 DIMENSIONS (mm are the original dimensions) bp (1) UNIT A bp c D E HE v mm 0.65 0.58 0.34 0.26 0.17 0.11 1.25 1.15 0.85 0.75 1.65 1.55 0.1 Note 1. The marking bar indicates the cathode.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 9. Packing information Table 9. Possible packing methods The indicated -xxx are the last three digits of the 12 NC ordering code.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 10. Revision history Table 10. Revision history Document ID Release date PESDXS1UB_SERIES_2 20090824 Modifications: Data sheet status Change notice Supersedes Product data - PESDXS1UB_SERIES_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NXP Semiconductors PESDxS1UB series ESD protection diodes in SOD523 package 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .