Datasheet

PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 February 2008 6 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
C
d
diode capacitance f = 1 MHz;
V
R
=0V
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
- 2228pF
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
- 1619pF
V
CL
clamping voltage
[1][2][3]
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
I
PP
=1A --8V
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
I
PP
=3A --12V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
I
PP
=1A --10V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
I
PP
= 2.5 A - - 13 V
r
dif
differential resistance I
R
=1mA
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
- - 200 Ω
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
- - 100 Ω
Table 9. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit