Datasheet

PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 February 2008 5 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
6. Characteristics
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
I
PP
(%)
0
e
−t
100 % I
PP
; 8 µs
50 % I
PP
; 20 µs
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
Table 9. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
- - 3.3 V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
- - 5.0 V
I
RM
reverse leakage current
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
V
RWM
= 3.3 V - 75 300 nA
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
V
RWM
= 5.0 V - 5 25 nA
V
BR
breakdown voltage I
R
=1mA
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
5.32 5.6 5.88 V
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
6.46 6.8 7.14 V