Datasheet

PESDXL4UF_G_W_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 28 February 2008 3 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 4. Ordering information
Type number Package
Name Description Version
PESD3V3L4UF XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
SOT886
PESD5V0L4UF
PESD3V3L4UG SC-88A plastic surface-mounted package; 5 leads SOT353
PESD5V0L4UG
PESD3V3L4UW - plastic surface-mounted package; 5 leads SOT665
PESD5V0L4UW
Table 5. Marking codes
Type number Marking code
[1]
PESD3V3L4UF A5
PESD5V0L4UF A6
PESD3V3L4UG L1*
PESD5V0L4UG L2*
PESD3V3L4UW A2
PESD5V0L4UW A1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power t
p
= 8/20 µs
[1][2][3]
-30W
I
PP
peak pulse current t
p
= 8/20 µs
[1][2][3]
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
- 3.0 A
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
- 2.5 A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=1ms
- 3.5 A