Datasheet
PESD2CAN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 27 September 2012 4 of 13
NXP Semiconductors
PESD2CAN
CAN bus ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage - - 24 V
I
RM
reverse leakage current V
RWM
=24V - <1 10 nA
V
BR
breakdown voltage I
R
= 1 mA 26.2 28 30.3 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V - 25 30 pF
V
CL
clamping voltage I
PP
=1A
[1][2]
--34V
I
PP
=5A
[1][2]
--41V
r
dif
differential resistance I
R
=1mA - - 300
T
amb
=25C
Fig 3. Peak pulse current as a function of clamping
voltage; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
V
CL
(V)
25 454030 35
006aaa937
4.0
2.0
6.0
8.0
I
PP
(A)
0
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)