Datasheet

PESD1CAN_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 15 February 2008 5 of 12
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
T
amb
=25°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
f = 1 MHz; T
amb
=25°C
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
Fig 6. V-I characteristics for a bidirectional ESD
protection diode
006aaa257
10
3
10
2
10
4
P
PP
(W)
10
t
p
(µs)
110
4
10
3
10 10
2
T
j
(°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
P
PP
0
P
PP(25°C)
V
R
(V)
0252010 155
006aaa258
8
12
4
16
20
C
d
(pF)
0
006aaa676
−V
CL
−V
BR
−V
RWM
V
CL
V
BR
V
RWM
−I
RM
I
RM
−I
R
I
R
−I
PP
I
PP
−
+