Datasheet

PESD1CAN_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 15 February 2008 4 of 12
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
6. Characteristics
[1] ∆C
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
between pin 2 and pin 3.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 1 to 3 or 2 to 3.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage - - 24 V
I
RM
reverse leakage current V
RWM
=24V - <1 50 nA
V
BR
breakdown voltage I
R
= 5 mA 25.4 27.8 30.3 V
C
d
diode capacitance f = 1 MHz; V
R
=0V - 1117pF
∆C
d
/C
d
diode capacitance
matching
[1]
f = 1 MHz; V
R
=0V - 0.1 - %
f = 1 MHz; V
R
= 2.5 V - 0.1 - %
V
CL
clamping voltage
[2][3]
I
PP
=1A --40V
I
PP
=3A --70V
r
dif
differential resistance I
R
= 1 mA - - 300 Ω