Datasheet

PESD1CAN_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 15 February 2008 2 of 12
NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to 3.
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3 common cathode
12
3
2
1
006aaa155
3
Table 3. Ordering information
Type number Package
Name Description Version
PESD1CAN - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PESD1CAN *AN
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
P
PP
peak pulse power t
p
= 8/20 µs
[1][2]
- 200 W
I
PP
peak pulse current t
p
= 8/20 µs
[1][2]
-3A
Per device
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C