Datasheet

2004 Mar 22 3
NXP Semiconductors Product data sheet
Voltage regulator diodes PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 200 mA
I
ZSM
non-repetitive peak reverse current t
p
= 100 μs; square wave;
T
amb
= 25 °C prior to surge
see Table 2
P
tot
total power dissipation T
amb
= 25 °C; note 1;
see Fig.2
− 400 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-s)
thermal resistance from junction to soldering point 130 K/W
R
th(j-a)
thermal resistance from junction to ambient note 1 340 K/W