Datasheet

PDTD123Y_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 4 of 10
NXP Semiconductors
PDTD123Y series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT346 - - 500 K/W
SOT54 - - 250 K/W
SOT23 - - 500 K/W
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=40V; I
E
= 0 A - - 100 nA
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=50V; I
B
=0A - - 0.5 μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 0.65 mA
h
FE
DC current gain V
CE
=5V; I
C
=50mA 70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=50mA; I
B
=2.5mA - - 0.3 V
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100μA0.40.61V
V
I(on)
on-state input voltage V
CE
=0.3V; I
C
=20mA 0.5 1 1.4 V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
-7-pF