Datasheet

ManualsBrandsNXP ManualsDiscrete SemiconductorsNPN Resistor Equipped Transistor SOT-23 NPN

1. Product profile

1.1 General description

500 mA NPN Resistor-Equipped Transistors (RET) family.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

1.3 Applications

1.4 Quick reference data

PDTD123Y series

NPN 500 mA, 50 V resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 02 — 16 November 2009 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEITA JEDEC

PDTD123YK SOT346 SC-59A TO-236 PDTB123YK

PDTD123YS

[1]

SOT54 SC-43A TO-92 PDTB123YS

PDTD123YT SOT23 - TO-236AB PDTB123YT

 Built-in bias resistors  Reduces component count

 Simplifies circuit design  Reduces pick and place costs

 500 mA output current capability  ±10 % resistor ratio tolerance

 Digital application in automotive and

industrial segment

 Cost saving alternative for BC817 series

in digital applications

 Controlling IC inputs  Switching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 50 V

output current (DC) - - 500 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 4.1 4.55 5

Summary of content (10 pages)

PAGE 1
PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family. Table 1.
PAGE 2
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 2. Pinning information Table 3.
PAGE 3
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 3. Ordering information Table 4.
PAGE 4
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Rth(j-a) [1] Conditions Min Typ Max Unit SOT346 - - 500 K/W SOT54 - - 250 K/W SOT23 - - 500 K/W thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8.
PAGE 5
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 006aaa322 103 (1) (2) (3) hFE 006aaa323 10−1 VCEsat (V) 102 (1) 10 (2) (3) 1 10−1 10−2 1 10 102 103 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2.
PAGE 6
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 8. Package outline 1.3 1.0 3.1 2.7 3 0.45 0.38 4.2 3.6 0.6 0.2 0.48 0.40 3.0 1.7 2.5 1.3 1 2 4.8 4.4 1 1.27 2 0.50 0.35 1.9 0.26 0.10 Dimensions in mm Fig 5. 2.54 3 5.2 5.0 04-11-11 Dimensions in mm Package outline SOT346 (SC-59A/TO-236) Fig 6. 04-11-16 Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 0.38 4.2 3.6 14.5 12.7 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 max 0.48 0.
PAGE 7
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 8
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTD123Y_SER_2 20091116 Product data sheet - PDTD123Y_SER_1 Modifications: PDTD123Y_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PAGE 9
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 10
PDTD123Y series NXP Semiconductors NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . .