Datasheet

1999 Apr 16 3
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC144ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 10 V
V
I
input voltage
positive − +40 V
negative −−10 V
I
O
output current (DC) − 100 mA
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=50V −−100 nA
I
CEO
collector cut-off current I
B
= 0; V
CE
=30V −−1µA
I
B
= 0; V
CE
=30V; T
j
= 150 °C −−50 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=5V −−90 µA
h
FE
DC current gain I
C
= 5 mA; V
CE
=5V 80 −−
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA −−150 mV
V
i(off)
input-off voltage I
C
= 100 µA; V
CE
=5V − 1.2 0.8 V
V
i(on)
input-on voltage I
C
= 2 mA; V
CE
= 0.3 V 3 1.6 − V
R1 input resistor 33 47 61 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance I
E
=i
e
= 0; V
CB
=10V; f=1MHz −−2.5 pF
R2
R1
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