DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143ZT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 21
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT FEATURES PINNING • Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively) PIN • Simplification of circuit design • Reduces number of components and board space.
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT MGM924 103 handbook, halfpage MGM923 103 handbook, halfpage (1) hFE VCEsat (2) (mV) (3) 102 102 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 10 10−1 102 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values.
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT NOTES 1999 May 21 7
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