Datasheet

2004 Aug 06 5
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 A − − 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 A − − 1 μA
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 A − − 2 mA
h
FE
DC current gain V
CE
= 5 V; I
C
= 20 mA 30 − −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − − 150 mV
V
i(off)
input-off voltage I
C
= 1 mA; V
CE
= 5 V − 1.2 0.5 V
V
i(on)
input-on voltage I
C
= 20 mA; V
CE
= 0.3 V 2 1.6 − V
R1 input resistor 1.54 2.2 2.86 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A;
f
= 1 MHz
− − 2.5 pF
R2
R1
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