Datasheet

2004 Aug 06 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PDTC123E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− 50 V
I
O
output current (DC) − 100 mA
R1 bias resistor 2.2 − kΩ
R2 bias resistor 2.2 − kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE PNP COMPLEMENT
PHILIPS EIAJ
PDTC123EE SOT416 SC-75 5A PDTA123EE
PDTC123EEF SOT490 SC-89 6A PDTA123EEF
PDTC123EK SOT346 SC-59 48 PDTA123EK
PDTC123EM SOT883 SC-101 G1 PDTA123EM
PDTC123ES SOT54 (TO-92) SC-43 TC123E PDTA123ES
PDTC123ET SOT23 − *26
(1)
PDTA123ET
PDTC123EU SOT323 SC-70 *48
(1)
PDTA123EU