Datasheet

PDTC114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 12 — 21 December 2011 9 of 17
NXP Semiconductors
PDTC114E series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
f=1MHz; T
amb
=25CV
CE
=5V; T
amb
=25C
Fig 10. Collector capacitance as a function of
collector-base voltage; typical values
Fig 11. Transition frequency as a function of collector
current; typical values of built-in transistor
V
CB
(V)
0504020 3010
006aac772
1
2
3
C
c
(pF)
0
006aac757
I
C
(mA)
10
-1
10
2
101
10
2
10
3
f
T
(MHz)
10