Datasheet

Philips Semiconductors
PCF85102C-2
256 × 8-bit CMOS EEPROM with I
2
C-bus interface
Product data Rev. 04 — 22 October 2004 10 of 20
9397 750 14216
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9. Limiting values
10. Characteristics
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage −0.3 +6.5 V
V
i
input voltage on any input pin |Z
i
| > 500 Ω V
SS
− 0.8 +6.5 V
I
i
input current on any input pin - 1 mA
I
o
output current - 10 mA
T
stg
storage temperature −65 +150 °C
T
amb
operating ambient temperature −40 +85 °C
Table 7: Characteristics
V
DD
= 2.5 to 6.0 V; V
SS
=0V; T
amb
= − 40 to +85 ° C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supplies
V
DD
supply voltage 2.5 - 6.0 V
I
DDR
supply current read f
SCL
= 100 kHz
V
DD
= 2.5 V - - 60 µA
V
DD
= 6.0 V - - 200 µA
I
DDW
supply current E/W f
SCL
= 100 kHz
V
DD
= 2.5 V - - 0.6 mA
V
DD
= 6.0 V - - 2.0 mA
I
DD(stb)
standby supply current V
DD
= 2.5 V - - 3.5 µA
V
DD
= 6.0 V - - 10 µA
SCL input (pin 6)
V
IL
LOW level input voltage −0.8 - 0.3V
DD
V
V
IH
HIGH level input voltage 0.7V
DD
- +6.5 V
I
LI
input leakage current V
I
=V
DD
or V
SS
--±1 µA
f
SCL
clock input frequency 0 - 100 kHz
C
i
input capacitance V
I
=V
SS
--7 pF
SDA input/output (pin 5)
V
IL
LOW level input voltage −0.8 - 0.3V
DD
V
V
IH
HIGH level input voltage 0.7V
DD
- +6.5 V
V
OL
LOW level output voltage I
OL
= 3 mA; V
DD(min)
- - 0.4 V
I
LO
output leakage current V
OH
=V
DD
--1 µA
C
i
input capacitance V
I
=V
SS
--7 pF
Data retention time
t
S
data retention time T
amb
=55°C10−− years